a) Low speed at high loads and high speed at low loads b) Low speed at low loads and high speed at low loads c) Widely varying speed d) Constant speed Ans: (d)
a) Run at lower speed b) Burn c) Run at normal speed d) Run continuously but for sparking at brushes Ans: (b)
a) Torque remains constant but h.p. will change b) Horse power remains constant but torque will change c) Both remains constant d) Both will change Ans: (b)
a) Half of the speed of the motors b) Rated speed of any of the motors c) One-fourth of the speed of the motors d) Same as in parallel Ans: (c)
a) Half the torque when they are connected in parallel b) Twice the torque when they are connected in parallel c) Four times the torque when they are connected in parallel d) Equal to the torque when they are connected in parallel Ans: (c)
a) Due to armature reaction and leakage of flux both b) Due to armature reaction of the machine c) Due to leakage flux d) Of synchronous machine Ans: (a)
a) Resistively b) Conductively c) Inductively d) None of these Ans: (b)
a) Field flux b) Armature resistance c) Applied voltage d) All of these Ans: (d)
a) Depends on requirement b) Compound motor is used c) Shunt motor is used d) Series motor is used Ans: (a)
a) They are not self-starting b) To light the high initial current by inserting high resistance c) To overcome back emf d) None of these Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |