Related Topics

  MCQ of D.C motor page-4  MCQ of D.C motor page-3  MCQ of D.C motor page-2  MCQ of D.C motor page-1

Index

SymbolsTransformerRelayPower-SystemBasic-electricalACSR-ConductorCircuit-BreakerInterview-questions-of-Basic-ElectricityInterview-questions-of-transformerInsulatorCurrent-TransformerMCQMCQ-powersystemThermal-power-stationInterview-questions-of-Power-SystemPower-ElectronicsInterview-questions-of-Underground-CableInterview-questions-of-IlluminationIlluminationMCQ-of-ElectronicsMCQ-of-Basic-ElectricalMCQ-of-Transformers MCQ-of-D.C-motor MCQ-of-D.C-generators

MCQ of D.C motor page-3

21. In the field flux method of speed control

a) Any speed can be attained
b) Speeds above normal speed can be attained
c) Speeds below normal speed can be attained
d) None of these

Ans:(b)

22. Speed of the d.c. motor can be varied by

a) Varying armature resistance
b) Varying supply voltage
c) Either (a) or (b)
d) Varying field current

Ans:(c)

23. Dynamic braking is generally used for

a) Shunt motors
b) Compound motors
c) Series motors
d) All of these

Ans:(d)

24. Stalling current is the maximum value of

a) Load current for which speed is zero
b) Field current for which speed is maximum
c) Load current for which speed is maximum
d) Diverter current for which speed is maximum

Ans:(c)

25. Torque developed in d.c. motor depends on

a) Armature
b) Speed
c) Magnetic field
d) Both (a) and (c)

Ans:(d)

26. As the load is increased, speed of d.c. shunt motor will

a) Increase slightly
b) Reduce slightly
c) Remains constant
d) None of these

Ans:(b)

27. Which method of speed control has minimum efficiency ?

a) Field control method
b) Voltage control method
c) Armature control method
d) None of these

Ans:(c)

28. Field flux of d.c. motor can be controlled to

a) Steady speed
b) Speeds above rated speed
c) Speeds below rated speed
d) Speeds above and below rated speed

Ans:(b)

<< Previous Next >>

 

Related topics :



Recent Post

Multiple Choice Question (MCQ) of Electronics page-17:
241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor.
b) The saturation voltage VCE for germanium transistor is more than silicon transistor.
c) The saturation voltage VCE for silicon transistor is same as that for germanium.
d) The saturation voltage VCE for silicon transistor is lower than germanium transistor.

Read more...

Multiple Choice Question (MCQ) of Electronics page-16:
226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor.
b) Bound electrons are always present in the semiconductor.
c) Free electrons are always present in the semiconductor.
d) Inner and bound electrons are always present in the semiconductor.

Read more...

Multiple Choice Question (MCQ) of Electronics page-15:
211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors
b) Conductors
c) Insulators
d) Alloys

Read more...

Multiple Choice Question (MCQ) of Electronics page-14:
196. In which of the following device the base resistors are not added in the package but added externally? a) UJT
b) CUJT
c) PUT
d) None of the above

Read more...

Multiple Choice Question (MCQ) of Electronics page-13:
181. The conduction in JEFT is always by the a) Majority carriers
b) Minority carriers
c) Holes
d) Electrons
e) Holes and electrons simultaneously

Read more...


Name :   

Comments: