a) A line current is maximum b) The total impedance is maximum c) The total impedance is maximum d) The inductive branch current is maximum Ans: (c)
a) Series resonance needs a high-resistance source for sharp rise in current b) Series resonance needs a low-resistance source for sharp rise in current c) Parallel resonance needs a low-resistance source for a sharp increase in impedance d) Parallel resonance needs a low-resistance source for a sharp rise in line current Ans: (b)
a) Current is minimum b) Voltage across C is minimum c) Impedance is maximum d) Current is maximum Ans: (d)
a) Low resistance b) High resistance c) Low permeability d) High hysteresis Ans: (b)
a) High resonant frequency b) Low resonant frequency c) High Q d) Low a.c. resistance Ans: ()
a) 0.002 b) 20 c) 200 d) 500 Ans: ()
a) Static change b) Steady magnetic field c) Varying magnetic field d) Stray capacitance Ans: ()
a) 10 ohms b) 160 ohms c) 100 ohms d) 1000 ohms Ans: (c)
a) 500 ohms b) 750 ohms c) 637 ohms d) 377 ohms Ans: (d)
a) 0.02 b) 0.002 c) 0.2 d) 0.0002 Ans: (d)
a) True b) False Ans: (a)
a) √LC b) √(L/C) c) √(1/LC) d) 1/√LC Ans: (d)
a) Maxwell’s First Law b) Maxwell’s Second Law c) Gauss’s Law d) Coulomb’s Square Law Ans: (c)
a) Electromotive force V b) Displacement current D c) Electric intensity d) Electric displacement Ans: (c)
a) ∂p/∂t = div i b) curl H = 𝒊 c) div D = P d) div i = 0 Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |