a) To increase the tensile strength of the rotor bars and hence strength b) To reduce the magnetic hum and locking tendency of the rotor c) To see the copper used d) Because of easy in fabrication Ans: (b)
a) Adding external resistance to the rotor b) Adding the external inductance to the rotor c) Adding both resistance and inductance to the rotor d) Adding external capacitance to the rotor Ans: (a)
a) The rotor will not run b) The rotor will run at very high speed c) The slip of the motor will be zero d) The torque produced will be very large Ans: (a)
a) true b) false Ans: (a)
a) 0.06 b)0.10 c) 0.04 d) 0.05 Ans: (d)
a) true b) false Ans: (a)
a) T is proportional to V2 b) T is proportional to V c) T is proportional to √V d) T is proportional to V1/4 Ans: (a)
a) 5% in the rotor torque b) 7% in the rotor torque c) 25% in the rotor d) 10% in the rotor torque Ans: (c)
a) At the value of the slip which makes rotor reactance per phase equal to the resistance per phase b) At the value of the slip which makes the rotor reactance half of the rotor resistance c) At the unit value of the slip d) At the zero value of the slip Ans: (a)
a) true b) false Ans: (a)
a) true b) false Ans: (a)
a) hyperbola b)parabola c) straight line d) rectangular parabola Ans: (d)
a) The maximum torque will depend on rotor resistance b) Although the maximum torque does not depend on rotor resistance yet the exact location of maximum torque is depend on it c) The maximum torque will depend on standstill reactance of rotor d) The slip of the induction motor decreases as the torque increases Ans: (b)
a) 1.6% b) 2% c) 1.65% d) 1.1% Ans: (c)
a) true b) false Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |