a) steam turbo-alternators have long speeds b) steam turbo-alternators run at higher speed c) steam turbo-alternators are built with smaller capacities d) none of these Ans: (b)
a) the poles b) armature c) brushes d) none of these Ans: (a)
a) reverse the connection of its field winding b) interchange any two of its phase terminals c) both (a) and (b) d) none of these Ans: (c)
a) ɭ = D/2 b) ɭ = D c) ɭ = 2D d) ɭ >> D Ans: (d)
a) zero lagging b) zero leading c) unity d) more than unity Ans: (b)
a) to reduce the size of the machine b) to reduce the stray losses c) to reduce harmonic output d) to reduce accurate phase shift of 120° between each phase Ans: (c)
a) thermocouple method b) thermometer method c) by measuring the increase in winding resistances d) none of these Ans: (a)
a) economy of material used in winding b) reduction of irregularities produced in waveform c) less weight of the entire armature d) increase of generated emf per phase Ans: (b)
a) high speed alternators b) low speed alternators c) lagging power factor of the load d) leading power factor of the load Ans: (d)
a) 0° b) 85° c) 120° d) 135° Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |