a) Inductance b) Capacitance. c) Inductance and capacitance both d) None of the above Ans: (a)
a) Greater than its surge loading. b) Less than the surge loading. c) Equal to the surge loading. d) None of the above is necessary. Ans: (b)
a) 1 kW/phase/km. b) 0.5 kW/phase/km. c) 0.667 kW/phase/km. d) None of the above. Ans: (c)
a) To increase the effective resistance and inductance. b) To increase the effective resistance but reduce inductance. c) To decreases the effective resistance and inductance. d) To decrease the effective resistance but increases the inductance. Ans: (b)
a) 1 meter. b) 2 meters. c) Just enough to avoid theft. d) None of the above. Ans: (c)
a) Circular. b) Flat. c) Oval. d) Independent of shape. Ans: (a)
a) Neutral is grounded directly. b) Ratio of X0/X1 > 3.0. c) Ratio of X0/X1 > 2.0. d) Ratio of X0/X1 < 3.0. Ans: (d)
a) 9 × 108 metres/sec. b) 3 × 108 metres/sec. c) 108 metres/sec. d) 2 × 108 metres/sec. Ans: (c)
a) 435.6 MW. b) 217.8 MW. c) 251.5 MW. d) 500 MW. Ans: (a)
a) P and Q increases. b) P increases, Q decreases. c) P decreases, Q increases. d) P and Q decreases. Ans: (c)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |