Objective Type Question or MCQ of B. Economics of Operation page-4

31. Stringing chart useful for

a) Finding the sag in the conductor.
b) In the design of tower.
c) In the design of insulator string.
d) Finding the distance between the tower.

Ans: (a)

32. For an existing a.c. transmission line the string efficiency is 80. Now of d.c. voltage is supplied for the same set up, the string efficiency will be

a) 80%
b) More than 80%
c) Less than 80%
d) 100%

Ans: (d)

33. Coefficient of reflection for current for an open ended line is

a) 1.0
b) 0.5
c) – 1.0
d) Zero.

Ans: (c)

34. Leakage resistance of a 50 km long cable is 1 MΩ. For a 100 km long cable it will be

a) 1 MΩ
b) 2 MΩ
c) 0.66 MΩ
d) None of the above

Ans: (d)

35. A voltmeter gives 120 oscillations per minute when connected to the rotor. The stator frequency is 50 Hz. The slip of the motor is

a) 2%
b) 4%
c) 5%
d) 2.5%

Ans: (b)

36. Solution of coordination equations takes into account

a) All the system constraints.
b) All the operational constraints.
c) All the system and operation constraints.
d) None of the above.

Ans: (d)

37. Charging reactance of 50 km length of line is 1500 Ω. The charging reactance for 100km length of line will be

a) 1500 Ω
b) 3000 Ω
c) 750 Ω
d) 600 Ω

Ans: (c)

38. In a two plant system, the load is connected at plant no 2. The loss coefficients

a) B₁₁, B₁₂, B₂₂ are nonzero.
b) B₁₁ and B₂₂ are nonzero but B₁₂ is zero.
c) B₁₁ and B₁₂ are nonzero but B₂₂ is zero.
d) B₁₁ is nonzero but B₁₂ and B₂₂ are zero.

Ans: (d)

39. Ferranti effect on long overhead lines is experienced when it is

a) Lightly loaded.
b) On full load at unity p.f.
c) On full load at 0.8 p.f. lag.
d) In all these case.

Ans: (a)

40. In-rush current of a transformer at no load is maximum if the supply voltage is switched on

a) At zero voltage value.
b) At peak voltage value.
c) At V/2 value.
d) At √3/2 value.

Ans: (a)

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Multiple Choice Question (MCQ) of Electronics page-17:
241. Which of the following statement is true? a) The saturation voltage V_CF of silicon transistor is more than germanium transistor.
b) The saturation voltage V_CE for germanium transistor is more than silicon transistor.
c) The saturation voltage V_CE for silicon transistor is same as that for germanium.
d) The saturation voltage V_CE for silicon transistor is lower than germanium transistor.

Multiple Choice Question (MCQ) of Electronics page-16:
226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor.
b) Bound electrons are always present in the semiconductor.
c) Free electrons are always present in the semiconductor.
d) Inner and bound electrons are always present in the semiconductor.

Multiple Choice Question (MCQ) of Electronics page-15:
211. The materials whose electrical conductivity is usually less than 1 × 10⁶ mho/m are a) Semiconductors
b) Conductors
c) Insulators
d) Alloys

Multiple Choice Question (MCQ) of Electronics page-14:
196. In which of the following device the base resistors are not added in the package but added externally? a) UJT
b) CUJT
c) PUT
d) None of the above

Multiple Choice Question (MCQ) of Electronics page-13:
181. The conduction in JEFT is always by the a) Majority carriers
b) Minority carriers
c) Holes
d) Electrons
e) Holes and electrons simultaneously

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Objective Type Question or MCQ of B. Economics of Operation page-4

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