# MCQ of Basic Electrical page-2

11. Maxwell circulating current theorem Utilizes Kirchhoff’s voltage law
b) Utilizes Kirchhoff’s current law
c) Is a network reduction method
d) Is confined to single loop circuits

12. The insulation on a current carrying conductor is provided to prevent

a) Current leakage Shock
c) Both (a) and (b)
d) None of these

13. EMF of a zinc-carbon cell is about

a) 1.2 V 1.5 V
c) 1.75 V
d) 2.2 V

14. The emf of primary cell depends upon the

a) Physical dimensions of cell
b) Nature of electrolyte
c) Both (a) and (c) None of these

15. The internal voltage drop of a voltage source

a) Is independent of load current supplied Depends upon internal resistance of the source
c) Does not influence the terminal voltage
d) Does affect the emf of the source

16. A voltage source of emf E volts and internal resistance r ohms will supply, on short circuit, a current of E/r amperes
b) zero
c) Infinite
d) E× r amperes

17. When two batteries of unequal voltages are connected in parallel, the emf of the combination will be equal to the Emf of the large battery
b) Emf of the small battery
c) Average of the emf of two batteries
d) None of these

18. At the center of a current carrying single turn circular loop, magnetic field is B = μl/2R
b) μl/(.2 πR)
c) B = μl/(4πR^2 )
d) None of these

19. The magnitude of force acting on current carrying conductor placed in a magnetic field is independent of

a) Flux density.
b) Length of the conductor. Cross-sectional area of the conductor.
d) Current flowing through the conductor.

20. The direction of mechanical force experienced on a current carrying conductor placed in a magnetic field is determined by Fleming’s left-hand rule.
b) Fleming’s right-hand rule.
c) Helix rule.
d) Corkscrew rule.

<< Previous Next >>

## Recent Post Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor.Read more... Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor.Read more... Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) AlloysRead more... Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the aboveRead more... Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneouslyRead more...

Name :