a) 1 db below its zero frequency b) 2 db below its zero frequency c) 3 db below its zero frequency d) 4 db below its zero frequency Ans: (c)
a) Zeros of open loop transfer function b) Zeros of closed loop transfer function c) Poles of closed loop transfer function d) Poles of open loop transfer function Ans: (c)
a) Db line of amplitude plot in Bode diagram b) 1 db line of amplitude plot in Bode diagram c) Either (a) and (b) d) None of these Ans: (c)
a) (1+T) b) (1+S) c) (Ts) d) (1+Ts) Ans: (d)
a) Gain margin b) Phase margin c) Both (a) and (b) d) None of these Ans: (c)
a) – 6 db/decade b) – 6 db/octave c) – 7 db/octave d) – 8 db/octave Ans: (b)
a) Are always symmetrical b) Can never be symmetrical c) May be symmetrical d) None of these Ans: (a)
a) Zero b) 100 c) 1 d) Infinity Ans: (d)
a) Modulation frequency b) Demodulation frequency c) Carrier frequency d) Band width Ans: (d)
a) Shift 90° clockwise b) Shift 90° anticlockwise c) Shift 180° d) Not change at all Ans: (a)
a) High oscillatory mode of transient response b) Steady state mode of response c) Sinusoidal mode of response d) None of these Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |