a) Lap wound armature b) Wave wound armature c) Both (a) and (b) d) None of these Ans: (a)
a) Current is reversed b) Voltage is reversed c) Both current and voltage are reversed d) None of these Ans: (a)
a) Field b) Load c) Brushed d) Armature Ans: (a)
a) Cross-magnetization effect of armature reaction b) Demagnetization effect of armature reaction c) Reactance voltage d) All of these Ans: (b)
a) Neutralize the reactance voltage only b) Neutralize the reactance voltage and cross-magnetization effect of armature reaction c) Neutralize demagnetization effect d) None of these Ans: (b)
a) Geometrical neutral axis b) Magnetic neutral axis c) Perpendicular to magnetic neutral axis d) None of these Ans: (b)
a) Long distance transmission b) Short distance transmission c) Medium distance transmission d) None of these Ans: (a)
a) Increasing its speed b) Decreasing its armature resistance c) Decreasing its speed d) None of these Ans: (a)
a) Under-compounded generators b) Over-compounded generators c) Flat-compounded generators d) None of these Ans: (c)
a) Field winding is reversed b) Load is connected c) Very high load is connected d) None of these Ans: (b)
a) D.c. voltage b) A.c. voltage c) No output d) None of these Ans: (b)
a) Equal to the rated load voltage b) Greater than rated load voltage c) Less than rated load voltage d) None of these Ans: (c)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |