a) Not run b) Burn due to extraordinarily high potential building up in the armature c) Not build up any voltage d) Run under unstable operating conditions. Ans: (c)
a) Armature flux due to armature current b) Load current c) Shunt and series field current d) None of these Ans: (a)
a) Makes the current distribution at brushes equal to avoid sparks b) Helps the noiseless operation of the machine c) Provides a path for the circulation of unbalanced current d) Provides mechanical strength for the winding of the armature Ans: (a)
a) Armature resistance drop b) Armature reaction c) Decrease in field current d) All of then Ans: (d)
a) Shunt coil may be connected in reverse direction b) There is no resistance magnetism in the poles c) Its shunt field resistance is more than critical resistance d) Any one of the above Ans: (d)
a) Greater reliabilty b) Greater efficiency c) Meeting more load demands d) All of these Ans: (d)
a) Internal characteristic b) No load saturation characteristic c) Both (a) and (b) d) None of these Ans: (c)
a) D.C. machines b) A.C. machines c) Universal machines d) All of these Ans: (d)
a) Series generator b) Shunt generator c) Compound generator d) Any one of then Ans: (b)
a) Take a smaller shunt of the total load b) Run as the motor in the same direction c) Take a large share of the total load d) Run in the opposite direction as motor Ans: (b)
a) At which it develops maximum voltage b) At which it supply maximum power c) Beyond which it can not develop any voltage d) At which the speed of generator is infinity Ans: (c)
a) Decrease b) Increase c) Remain same d) None of these Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |