a) 1/Xcs = 1/Xc1 + 1/Xc2 + 1/Xc3 b) Xcs = Xc1 + Xc2 + Xc3 c) Xcs = 1/Xc1 + 1/Xc2 + 1/Xc3 d) Xcs = 1/Xc1 + Xc2+ Xc3 Ans: (b)
a) ES = ER b) ES+ EC c) ER=0.707 EC d) ER= 0.707 ES Ans: (d)
a) 1/s b) 1/s2 c) S d) 1 Ans: (a)
a) 1/a2+ s2 b) 1/a+s c) 1/a+s d) s2/a2+ s2 Ans: (b)
a) β/s2+β2 b) s/s2+β2 c) 1/2+β2 d) β/s+β Ans: (b)
a) β/s+β2 b) β/s2+β2 c) s/s2+β2 d) β2/s+β Ans: (a)
a) 1/s b) 1/s2 c) 1/s3 d) S Ans: (a)
a) ƒ(t) = tn b) ƒ(t) = ntn c) ƒ(t) = t/n d) ƒ(t) = tn Ans: (a)
Line s F(s) = line ƒ(t)
s →∞ t → 0
a) ƒ(t) and its derivative ƒ(t) must have Laplace transformer b) if the Laplace transform of ƒ(t) is F(s), the lim sF(s) must exist c) only ƒ(t) must have Laplace transformer d) (a) and (b) both Ans: (d)
a) S b) 1/s c) Unity d) 1/s2 Ans: (c)
a) One b) Two c) Three d) None Ans: (a)
a) One pole will be located on the real axis of s-plane at – α b) One pole will be located on the imaginary axis of s-plane at ± ϳω c) One complex pole will be located at the origin of s-plane d) One complex pole will be located in s-plane at – α ± јω Ans: (a)
a) ƒ(t) = t b) ƒ(t) = 1 c) ƒ(t) = δt d) ƒ(t) = 2t e) ƒ(t) = t2 Ans: (e)
a) integrate unit impulse function once b) integrate unit impulse function twice c) integrate unit impulse function thrice d) differentiate unit impulse function twice e) differentiate unit impulse once as a function of time Ans: (c)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |