a) True b) False Ans: (b)
a) 1.11 b) 1.57 c) 1.414 d) 0.637 e) 0.707 Ans: (c)
a) 3/4 P b) 2/3 P c) 4/3 P d) 3/2 P Ans: (c)
a) Very high b) Practically zero c) A few thousand ohm d) Close to 10,000 ohms Ans: (b)
a) 5 watts b) 10 watts c) 20 watts d) 100 watts Ans: (c)
a) Increases in each branch b) Is zero in all branches c) Is zero in the highest resistive branch d) Increases in the branch of the lowest resistance Ans: (b)
a) Parallel with each other b) Parallel with the voltage source c) Series with the voltage source d) Series with each other Ans: (d)
a) The same current as in the voltage source b) The same current c) The same IR drop d) An IR drop equal to the applied voltage Ans: (c)
a) 5 volts across a 5 ohm resistance b) 5 volts across two 5 ohm resistance in series c) 5 volts across two 5 ohm resistance in parallel d) 500 volts across a 1 M Ω resistance Ans: (c)
a) Rest of the two bulbs will not light b) All three bulbs will light c) The other two bulbs will light d) There will be heavy current in the main line Ans: (c)
a) 0.1 ohm b) 0.02 ohm c) 0.2 ohm d) 0.05 ohm Ans: (c)
a) Negative b) Zero c) Positive d) About 5 ohms per degree Ans: (c)
a) R.M.S. value of current is greater than the average value b) R.M.S. value of current is less than the average value c) R.M.S. value of the current is to average value d) There is no meaning of r.m.s value and average value for square wave Ans: (c)
a) True b) False Ans: (a)
a) True b) False Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |