a) 6 A b) 6.15 A c) 8.7 A d) 5 A Ans: (b)
a) Induction motor b) Synchronous motor c) D.c. series motor d) D.c. compound motor Ans: (a)
a) Amplifier b) Rectifier c) Transformer d) Diode Ans: (a)
a) A rotary convertor can be called a Synchronous invertor. b) A rotary convertor can be called a Synchronous convertor. c) A rotary convertor can be called a Synchronous divertor. d) A rotary convertor can be called a Synchronous capacitor. Ans: (b)
a) Single phase rotary convertor. b) Three phase rotary convertor. c) Six phase rotary convertor. d) Twelve phase rotary convertor. Ans: (c)
a) True b) False Ans: (a)
a) By using tap changing transformer. b) Series reactance control method. c) Induction regular. d) Synchronous booster control method. Ans: ()
a) Convertor only b) Inventor only c) (a) and (b) both d) Transducer Ans: (c)
a) When anode is as positive potential with respect to cathode b) When anode is at negative potential with respect to cathode c) When anode will repel the electrons d) When anode is at very low temperature Ans: (a)
a) To limit the rate of change of flux in the circuit b) To limit the voltage of the circuit c) To limit the rate of change of the current in the circuit d) To limit the current in the circuit Ans: (d)
a) They are easily available b) They work noiselessly c) They are very cheap d) Their output is much smoother Ans: (d)
a) (actual power)/(full load rating) b) (wattless power component)/(full load rating) c) (actual power)/(half load rating) d) (total a.c. input)/(total d.c. output) e) (total d.c output)/(total d.c. input) Ans: (a)
a) Diode rectifier b) Silicon controlled rectifier c) Mercury-arc rectifier d) Metal rectifier Ans: (c)
a) Reactance drop b) Mean resistance drop c) Arc voltage drop Ans: ()
a) True b) False Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |