a) P-type semiconductor with excess holes is produced by doping with arsenic
b) N-type semiconductor with excess electrons is produced by doping with arsenic
c) N-type semiconductor with excess electrons is produced by doping with indium
d) N-type semiconductor with excess hold is produced by doping with arsenic

Ans: (b)

a) Positive charges in the opposite direction from electron current
b) Positive charges in the same direction from electron current
c) Neutral changes in the opposite direction from electron current
d) Negative charges in the opposite direction from electron current

Ans: (a)

a) 5 volt aiding forward current
b) 0.2 volt opposing forward current
c) 2.5 volts opposing forward current
d) 2.5 volts opposing reverse current

Ans: (b)

a) Forward bias at all times
b) Reverse bias for p-n-p and forward bias for n-p-n transistor
c) Rever bias at all times
d) Reverse bias for n-p-n forward bias for p-n-p transistor

Ans: (c)

a) Common base circuit because it has high voltage gain
b) Common emitter circuit because it has high voltage and current gain
c) Common collector circuit because it has high gain
d) Common emitter circuit is of a little use because it has extremely low input resistance

Ans: (b)

a) Hole current in the collector
b) Electron current in the emitter
c) Hole current in the emitter
d) Electro current in the collector

Ans: (c)

a) 800
b) 400
c) 3
d) 40

Ans: (d)

a) Increase the forward current
b) Increase the reverse current
c) Prevent excessive temperature rise
c) Compensate for excessive doping

Ans: (c)

a) Square thin wire
b) Round thin wire
c) Hollow tubular conductor of large diameter
d) Long thin wire

Ans: (c)

a) 100 μμF ceramic capacitor
b) 1 μF paper capacitor
c) 1 μF electrolyte capacitor
d) 40 μF electrolyte capacitor

Ans: (a)

a) Iron enclosure
b) Farady screen
c) Permalloy
d) Copper or aluminium enclosure

Ans: (d)

a) True
b) False

Ans: (a)

a) True
b) False

Ans: (a)

a) True
b) False

Ans: (b)

a) True
b) False

Ans: (a)

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