a) P-type semiconductor with excess holes is produced by doping with arsenic b) N-type semiconductor with excess electrons is produced by doping with arsenic c) N-type semiconductor with excess electrons is produced by doping with indium d) N-type semiconductor with excess hold is produced by doping with arsenic Ans: (b)
a) Positive charges in the opposite direction from electron current b) Positive charges in the same direction from electron current c) Neutral changes in the opposite direction from electron current d) Negative charges in the opposite direction from electron current Ans: (a)
a) 5 volt aiding forward current b) 0.2 volt opposing forward current c) 2.5 volts opposing forward current d) 2.5 volts opposing reverse current Ans: (b)
a) Forward bias at all times b) Reverse bias for p-n-p and forward bias for n-p-n transistor c) Rever bias at all times d) Reverse bias for n-p-n forward bias for p-n-p transistor Ans: (c)
a) Common base circuit because it has high voltage gain b) Common emitter circuit because it has high voltage and current gain c) Common collector circuit because it has high gain d) Common emitter circuit is of a little use because it has extremely low input resistance Ans: (b)
a) Hole current in the collector b) Electron current in the emitter c) Hole current in the emitter d) Electro current in the collector Ans: (c)
a) 800 b) 400 c) 3 d) 40 Ans: (d)
a) Increase the forward current b) Increase the reverse current c) Prevent excessive temperature rise c) Compensate for excessive doping Ans: (c)
a) Square thin wire b) Round thin wire c) Hollow tubular conductor of large diameter d) Long thin wire Ans: (c)
a) 100 μμF ceramic capacitor b) 1 μF paper capacitor c) 1 μF electrolyte capacitor d) 40 μF electrolyte capacitor Ans: (a)
a) Iron enclosure b) Farady screen c) Permalloy d) Copper or aluminium enclosure Ans: (d)
a) True b) False Ans: (a)
a) True b) False Ans: (a)
a) True b) False Ans: (b)
a) True b) False Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |