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Multiple Choice Question (MCQ) of Electronics page-10


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136. When the germanium is doped with a controlled amount of purity

a) P-type semiconductor with excess holes is produced by doping with arsenic
b) N-type semiconductor with excess electrons is produced by doping with arsenic
c) N-type semiconductor with excess electrons is produced by doping with indium
d) N-type semiconductor with excess hold is produced by doping with arsenic

Ans: (b)

137. The hold current is the movement of

a) Positive charges in the opposite direction from electron current
b) Positive charges in the same direction from electron current
c) Neutral changes in the opposite direction from electron current
d) Negative charges in the opposite direction from electron current

Ans: (a)

138. The barring voltage at p-n or p-n junction is approximately

a) 5 volt aiding forward current
b) 0.2 volt opposing forward current
c) 2.5 volts opposing forward current
d) 2.5 volts opposing reverse current

Ans: (b)

139. The collector circuit in a transistor amplifier circuit is

a) Forward bias at all times
b) Reverse bias for p-n-p and forward bias for n-p-n transistor
c) Rever bias at all times
d) Reverse bias for n-p-n forward bias for p-n-p transistor

Ans: (c)

140. Which of the following circuit is mostly used as an amplifier?

a) Common base circuit because it has high voltage gain
b) Common emitter circuit because it has high voltage and current gain
c) Common collector circuit because it has high gain
d) Common emitter circuit is of a little use because it has extremely low input resistance

Ans: (b)

141. The arrow in the symbol for a transistor indicates the direction of

a) Hole current in the collector
b) Electron current in the emitter
c) Hole current in the emitter
d) Electro current in the collector

Ans: (c)

142. When a change in base current from 40 to 50 mA change the collector current from 600 to 1000 mA, the β factor of this power transistor equals

a) 800
b) 400
c) 3
d) 40

Ans: (d)

143. A heat sink is often used with transistors and semiconductor diodes to

a) Increase the forward current
b) Increase the reverse current
c) Prevent excessive temperature rise
c) Compensate for excessive doping

Ans: (c)

144. The skin effect will produce the least losses with r.f. current flowing in a

a) Square thin wire
b) Round thin wire
c) Hollow tubular conductor of large diameter
d) Long thin wire

Ans: (c)

145. Which of the following is the best bypass a 1 MΩ resistor at 50 MHz?

a) 100 μμF ceramic capacitor
b) 1 μF paper capacitor
c) 1 μF electrolyte capacitor
d) 40 μF electrolyte capacitor

Ans: (a)

146. For a r.f. electromagnetic field the best shield is

a) Iron enclosure
b) Farady screen
c) Permalloy
d) Copper or aluminium enclosure

Ans: (d)

147. The current through an external plate load resistor is the same as the internal electron flow in tube to the plate.

a) True
b) False

Ans: (a)

148. The emitter is always forward biased which the collector has the reverse bias in the transistor.

a) True
b) False

Ans: (a)

149. The input characteristic of the transistors in the ratio of the collector current to the base current.

a) True
b) False

Ans: (b)

150. The + make on the silicon diode power rectifier indicates where positive d.c. output voltage is obtained

a) True
b) False

Ans: (a)


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