Multiple Choice Question (MCQ) of Electronics page-11

151. The “slide rule” is said to be

a) Analog computer
b) Digital computer
c) Hybrid computer
d) Tele-type machine

Ans: (a)

152. The series combination of the resistance and capacitance is put across the thyristor to protect it from

a) High current
b) High voltage
c) High rate of change of voltage
d) High rate of change of current
e) Thermal runaway

Ans: (c)

153. A radar measures the distance by measuring the

a) Voltage amplitude of the transmitted r.f. pulses
b) Voltage amplitude of an echo
c) Time between transmitted r.f. pulses
d) Time between its r.f. pulse and its echo

Ans: (d)

154. Inductors are not common in ICs.

a) True
b) False

Ans: (a)

155. Sio₂ is a conductor.

a) True
b) False

Ans: (b)

156. In semiconductor ICs a resistance is made when the base of the transistor is made.

a) True
b) False

Ans: (a)

157. In semiconductor ICs a diode is similar to a capacitor.

a) True
b) False

Ans: (a)

158. It is easy to make n-p-n and p-n-p transistors on the same chip.

a) True
b) False

Ans: (a)

159. Hybrid ICs are generally cheaper than other type ICs.

a) True
b) False

Ans: (b)

160. In triggering triac with a gate pulse a low current has a long turn on time and a high current a short turn on time.

a) True
b) False

Ans: (a)

161. A 4-volt change in control grid voltage is equal to a 4-volt change in plate voltage on the amount of electrons reaching plate.

a) True
b) False

Ans: (b)

162. All electrons emitting materials are placed on the filaments.

a) True
b) False

Ans: (b)

163. An increase in grid bias of thyratron will require an increase in anode voltage to make it conduct.

a) True
b) False

Ans: (a)

164. What is the distance between crests of a radio wave whose frequency is 3 × 108 Hz?

a) 1 m/cycle
b) 1 cm/cycle
c) 40 cm/cycle
d) 10 cm/cycle

Ans: (a)

165. The phototubes are relatively high resistance devices even when they conduct.

a) True
b) False

Ans: (a)

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Multiple Choice Question (MCQ) of Electronics page-17:
241. Which of the following statement is true? a) The saturation voltage V_CF of silicon transistor is more than germanium transistor.
b) The saturation voltage V_CE for germanium transistor is more than silicon transistor.
c) The saturation voltage V_CE for silicon transistor is same as that for germanium.
d) The saturation voltage V_CE for silicon transistor is lower than germanium transistor.

Multiple Choice Question (MCQ) of Electronics page-16:
226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor.
b) Bound electrons are always present in the semiconductor.
c) Free electrons are always present in the semiconductor.
d) Inner and bound electrons are always present in the semiconductor.

Multiple Choice Question (MCQ) of Electronics page-15:
211. The materials whose electrical conductivity is usually less than 1 × 10⁶ mho/m are a) Semiconductors
b) Conductors
c) Insulators
d) Alloys

Multiple Choice Question (MCQ) of Electronics page-14:
196. In which of the following device the base resistors are not added in the package but added externally? a) UJT
b) CUJT
c) PUT
d) None of the above

Multiple Choice Question (MCQ) of Electronics page-13:
181. The conduction in JEFT is always by the a) Majority carriers
b) Minority carriers
c) Holes
d) Electrons
e) Holes and electrons simultaneously

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Multiple Choice Question (MCQ) of Electronics page-11

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