Multiple Choice Question (MCQ) of Electronics page-12

166. The reverse bias in the semiconducting devices will

a) Increase the potential barrier
b) Decrease the potential barrier
c) Not affect the potential barrier
d) Make the potential barrier zero

Ans: (a)

167. The bipolar transistors have larger voltage gain than JFET for a given supply voltage.

a) True
b) False

Ans: (a)

168.MOSFET is

a) A current-driven device
b) A voltage-driven device
c) A low input impedance
d) An inefficient switching device
e) A power driven device

Ans: (b)

169. MOSFETs essentially require dual polarity power supply to turn them ON and OFF.

a) True
b) False

Ans: (b)

170. The typical value of leakage current for MOSFET is

a) 10^-14 A
b) 10^-4 A
c) 10^-10 A
d) 10^-12 A

Ans: (a)

171. MOSFETs are suitably used where source resistance ranges from

a) A few ohms to thousand ohms
b) 10 to 100 MΩ
c) 100 MΩ and above
d) Milliohms to a few ohms

Ans: (c)

172. Which of the following device is the best for improving switching speeds of bipolar transistors?

a) Speed-up capacitor
b) Transistor with higher cut-off frequency
c) Clamping diode
d) Clamping diode with zero storage time

Ans: (d)

173. Which of the following makes an active circuit?

a) inductor
b) resistor
c) Field effect transistor
d) Bipolar transistor
e) (c) and (b) both
f) Capacity

Ans: (e)

174. Which of the following displays has minimum power consumption?

a) Light emitting diode (LED)
b) Liquid crystal display (LCD)
c) Nixie tubes
d) Fluorescent

Ans: (b)

175. Which of the following displays has slowest switching speed?

a) LEDs
b) LCD
c) Nixie tubes
d) Fluorescent

Ans: (b)

176. A transistor is faster switching device than silicon controlled rectifier of same capacity.

a) True
b) False

Ans: (a)

177. For the operation of FET with TTL logic, the threshold voltage of FET shall be

a) 4 V
b) -12 V
c) -4 V
d) 2.2 V

Ans: (d)

178. An operational amplifier shall have zero voltage output for zero input voltage.

a) True
b) False

Ans: (b)

179. The output offset of an operational amplifier is attributed to

a) An input-voltage offset
b) An input current offers
c) Either (a) or (b)
d) (a) and (b) both

Ans: (c)

180. Offset voltages of an amplifier are dependent of circuit gain.

a) True
b) False

Ans: (b)

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241. Which of the following statement is true? a) The saturation voltage V_CF of silicon transistor is more than germanium transistor.
b) The saturation voltage V_CE for germanium transistor is more than silicon transistor.
c) The saturation voltage V_CE for silicon transistor is same as that for germanium.
d) The saturation voltage V_CE for silicon transistor is lower than germanium transistor.

Multiple Choice Question (MCQ) of Electronics page-16:
226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor.
b) Bound electrons are always present in the semiconductor.
c) Free electrons are always present in the semiconductor.
d) Inner and bound electrons are always present in the semiconductor.

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211. The materials whose electrical conductivity is usually less than 1 × 10⁶ mho/m are a) Semiconductors
b) Conductors
c) Insulators
d) Alloys

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196. In which of the following device the base resistors are not added in the package but added externally? a) UJT
b) CUJT
c) PUT
d) None of the above

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181. The conduction in JEFT is always by the a) Majority carriers
b) Minority carriers
c) Holes
d) Electrons
e) Holes and electrons simultaneously

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Multiple Choice Question (MCQ) of Electronics page-12

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