a) Increase the potential barrier b) Decrease the potential barrier c) Not affect the potential barrier d) Make the potential barrier zero Ans: (a)
a) True b) False Ans: (a)
a) A current-driven device b) A voltage-driven device c) A low input impedance d) An inefficient switching device e) A power driven device Ans: (b)
a) True b) False Ans: (b)
a) 10-14 A b) 10-4 A c) 10-10 A d) 10-12 A Ans: (a)
a) A few ohms to thousand ohms b) 10 to 100 MΩ c) 100 MΩ and above d) Milliohms to a few ohms Ans: (c)
a) Speed-up capacitor b) Transistor with higher cut-off frequency c) Clamping diode d) Clamping diode with zero storage time Ans: (d)
a) inductor b) resistor c) Field effect transistor d) Bipolar transistor e) (c) and (b) both f) Capacity Ans: (e)
a) Light emitting diode (LED) b) Liquid crystal display (LCD) c) Nixie tubes d) Fluorescent Ans: (b)
a) LEDs b) LCD c) Nixie tubes d) Fluorescent Ans: (b)
a) True b) False Ans: (a)
a) 4 V b) -12 V c) -4 V d) 2.2 V Ans: (d)
a) True b) False Ans: (b)
a) An input-voltage offset b) An input current offers c) Either (a) or (b) d) (a) and (b) both Ans: (c)
a) True b) False Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |