a) Majority carriers
b) Minority carriers
c) Holes
d) Electrons
e) Holes and electrons simultaneously

Ans: (a)

a) Zener diode
b) Gas filled tubes
c) JFET
d) P-n-p transistor

Ans: (c)

a) 4 to 8 V
b) -4 to -8 V
c) 0.4 to -0.8 V
d) -0.4 to -8 V
e) 0.4 to 8 V

Ans: (d)

a) Multiplication of two or more quantities
b) Superimposition of two or more electrical signals of different frequencies for their parallel transmission through one channel
c) Scanning of analog or digital inputs on “Time-Sharing” basis
d) (b) and (c) both

Ans: (d)

a) True
b) False

Ans: (b)

a) Fast switching
b) Low drive current
c) No second breakdown
d) Ease of paralleling
e) Excellent temperature stability

Ans: (c)

a) 30° to 90°
b) 0° to 90°
c) 40° to 140°
d) 0° to 180°
e) None of the above

Ans: (c)

a) 30 watts
b) 60 watts
c) 175 milliwatts
d) 300 milliwatts

Ans: (a)

a) True
b) False

Ans: (b)

a) Junction transistors
b) Coated cathodes valves
c) (a) and (b) both
d) Integrated circuits

Ans: (c)

a) 30 cm
b) 40 cm
c) 50 cm
d) 35 cm

Ans: (a)

a) Rectifier
b) Schottky
c) PIN
d) Zener
e) Tunnel

Ans: (b)

a) P-n junction
b) Metal-to-semiconductor junction
c) P and n regions separated by an intrinsic region
d) P-n junction with every heavy dropping

Ans: (b)

a) True
b) False

Ans: (a)

a) True
b) False

Ans: (a)

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