a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously Ans: (a)
a) Zener diode b) Gas filled tubes c) JFET d) P-n-p transistor Ans: (c)
a) 4 to 8 V b) -4 to -8 V c) 0.4 to -0.8 V d) -0.4 to -8 V e) 0.4 to 8 V Ans: (d)
a) Multiplication of two or more quantities b) Superimposition of two or more electrical signals of different frequencies for their parallel transmission through one channel c) Scanning of analog or digital inputs on “Time-Sharing” basis d) (b) and (c) both Ans: (d)
a) True b) False Ans: (b)
a) Fast switching b) Low drive current c) No second breakdown d) Ease of paralleling e) Excellent temperature stability Ans: (c)
a) 30° to 90° b) 0° to 90° c) 40° to 140° d) 0° to 180° e) None of the above Ans: (c)
a) 30 watts b) 60 watts c) 175 milliwatts d) 300 milliwatts Ans: (a)
a) True b) False Ans: (b)
a) Junction transistors b) Coated cathodes valves c) (a) and (b) both d) Integrated circuits Ans: (c)
a) 30 cm b) 40 cm c) 50 cm d) 35 cm Ans: (a)
a) Rectifier b) Schottky c) PIN d) Zener e) Tunnel Ans: (b)
a) P-n junction b) Metal-to-semiconductor junction c) P and n regions separated by an intrinsic region d) P-n junction with every heavy dropping Ans: (b)
a) True b) False Ans: (a)
a) True b) False Ans: (a)