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Multiple Choice Question (MCQ) of Electronics page-16

226. Which of the following statement is correct?

a) Inner electrons are always present in the semiconductor.
b) Bound electrons are always present in the semiconductor.
c) Free electrons are always present in the semiconductor.
d) Inner and bound electrons are always present in the semiconductor.

Ans: (d)

227. Intrinsic semiconductors have

a) More electrons than holes
b) More protons than holes
c) More holes than electrons
d) Electrons equal holes

Ans: (d)

228. Why the valence electrons are specifically important in semiconductors?

a) Because they are negatively charged
b) Because they can contribute to current flow in certain situations
c) Because they can produce bonds with other atoms
d) Because they make covalent bonds

Ans: (b)

229. Which electrons are important in holding atoms in crystal together?

a) The inner electrons of the atoms
b) The valence electrons that are in outer shells of atoms
c) (a) and (b) both
d) All the electrons irrespective of location

Ans: (b)

230. The reciprocal of slope of a line joining the operating the operating point to the origin in the volt-ampere characteristics curve of diode is defined as

a) Dynamic resistance of diode
b) Static resistance of diode
c) (a) and (b) both
d) Reverse resistance

Ans: (b)

231. Which of the following resistance is important in case of diode?

a) Dynamic resistance
b) Static resistance
c) Reverse resistance
d) None of the above

Ans: (a)

232.If the reverse voltage in a diode is increased, the barrier capacitance would

a) Increase
b) Decrease
c) Remain constant
d) Increase proportional to applied voltage

Ans: (b)

233. The diode used for voltage regulating purposes below 2 V it usually chosen to conduct

a) In forward direction
b) In reverse direction
c) In either forward or reverse direction
d) In both direction depending on the polarity of applied voltage

Ans: (a)

234. Which of the following combination will be chosen to use the diodes for higher voltage rating?

a) The diodes shall be connected in series
b) The diodes shall be connected in parallel
c) Some diodes in series and a few in parallel
d) Such above combinations are not possible and only single diode shall be used of the rated voltage

Ans: (a)

235. Diodes manufactured specially for voltage tuning of the LC resonant circuits are called

a) Tunnel diodes
b) Zener diodes
c) Varactors
d) Varicaps
e) Voltacaps
f) (c) or (d) or (e)

Ans: (f)

236. The degree of doping in a semiconductor material is commonly expressed in terms of

a) Drift
b) Diffusion
c) Conductivity
d) Resistivity
e) Conductivity or resistivity

Ans: (c)

237. Which of the following assumption is taken into consideration if the transistor alpha is defined as the product of the transport factor and emitter efficiency?

a) Collector multiplication ratio is zero
b) Collector multiplication ratio is positive
c) Collector multiplication ratio is negative
d) Collector multiplication ratio is unity

Ans: (d)

238. The transistor can provide

a) Current amplification
b) Voltage amplification
c) Power amplification
d) Current, voltage and power amplification

Ans: (d)

239. Which of the following condition must be satisfied to operate a p-n-p transistor in active region?

a) The collector and the emitter junction are biased in the forward direction
b) The collector junction is biased in the forward direction and the emitter junction is biased in reverse direction
c) The collector junction is biased in reverse direction and emitter junction is biased in forward direction
d) The collector and emitter junction are biased in reverse direction

Ans: (c)

240. If the transistor is used as an amplifier without appreciable distortion with common configuration, it should be restricted to operate in

a) Cut-off region
b) Action region
c) Saturation region
d) Either of the above

Ans: (b)

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Recent Post

Multiple Choice Question (MCQ) of Electronics page-17:
241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor.
b) The saturation voltage VCE for germanium transistor is more than silicon transistor.
c) The saturation voltage VCE for silicon transistor is same as that for germanium.
d) The saturation voltage VCE for silicon transistor is lower than germanium transistor.

Read more...

Multiple Choice Question (MCQ) of Electronics page-16:
226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor.
b) Bound electrons are always present in the semiconductor.
c) Free electrons are always present in the semiconductor.
d) Inner and bound electrons are always present in the semiconductor.

Read more...

Multiple Choice Question (MCQ) of Electronics page-15:
211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors
b) Conductors
c) Insulators
d) Alloys

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Multiple Choice Question (MCQ) of Electronics page-14:
196. In which of the following device the base resistors are not added in the package but added externally? a) UJT
b) CUJT
c) PUT
d) None of the above

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Multiple Choice Question (MCQ) of Electronics page-13:
181. The conduction in JEFT is always by the a) Majority carriers
b) Minority carriers
c) Holes
d) Electrons
e) Holes and electrons simultaneously

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