a) n-p-p transistor b) p-n-p transistor c) field2 effect transistor d) none of the above Ans: (d)
a) A variable capacitance b) A variable reactance c) A variable inductance d) A variable resistance e) None of the above Ans: (d)
a) pick off voltage b) critical voltage c) pinch off voltage d) breakdown voltage Ans: (c)
a) To minimize the noise b) To increase the bandwidth c) To isolates a.c. signal from d.c. signal d) None of the above Ans: (c)
a) true b) false Ans: (a)
a) The phase shift will increase b) The phase shift will decrease c) The phase shift will not vary d) The phase shift has no relation with gain Ans: (a)
a) Better than that of each stage b) Worse than that of each stage c) Same as that of each stage d) None of the above Ans: (b)
a) Increase as the number of identical amplifier stages increases b) Decrease as the number of identical amplifier stages increases c) Not change as the number of identical amplifier stages increases d) Be very high as the number of identical amplifier stages increases Ans: (b)
a) The problem of impedance matching is solved b) There is a little power loss in the transformer winding c) The use of transformer is cheaper than the RC coupled network d) Of easy control of voltage output Ans: (b)
a) Audio voltage amplifier b) Audio power amplifier c) Audio current amplifier d) Any one of the above Ans: (b)
a) Plate resistance is equal to the load resistance b) Plate resistance is less than the load resistance c) Plate resistance is more than the load resistance d) Load resistance is very high Ans: (a)
a) True b) False Ans: (a)
a) RC coupled amplifier b) Transformer coupled amplifier c) Push-pull amplifier d) Audio power amplifier Ans: (c)
a) 60° out of phase b) 180° out of phase c) In phase d) 90° out of phase Ans: (b)
a) Phase-converter amplifier b) Phase-inverter amplifier c) Phase-diverter amplifier d) None of the above Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |