a) The electrons drifting through the depletion region pick up sufficient K.E. to ionize other atoms with which they collide and produce sudden large reverse current b) There is large forward bias current to cause breakdown c) There is large reverse bias current to break covalent bonds and produce free electron-hole pairs d) None of the above Ans: (c)
a) Zener breakdown only b) Avalanche breakdown only c) Either (a) or (b) d) (a) or (b) both Ans: (d)
a) D.C. voltage b) A.C. voltage c) Square wave d) Sinusoidal voltage Ans: (a)
a) Without converting it to alternation current b) First converting to alternating current and amplify it, then reconverts to direct current c) Either (a) or (b) d) None of the above Ans: (b)
a) RC coupled amplifier b) Transformer coupled amplifier c) Direct-coupled amplifier d) Difference amplifier Ans: (c)
Which of the following amplifiers will be used?
a) RC coupled amplifier b) Transformer coupled c) Difference amplifier d) Audio power amplifier Ans: (c)
a) True b) False Ans: (a)
a) Stereophonic b) Microphonic c) Electro-chemical conversion d) Vibrational echo Ans: (b)
a) 0° C b) Absolute zero c) 0 °F d) 273° K Ans: (b)
a) True b) False Ans: (a)
a) Coupled capacity b) Cathode bypass capacity c) Output capacitance of the signal source d) Inter-electrode capacitance and stray capacitance Ans: (d)
a) Increase b) Decrease c) Not be affected d) Become random in the nature Ans: (b)
a) Positive b) Negative c) Zero d) Unity Ans: (b)
a) Zero b) One c) Infinity d) Less than zero Ans: (b)
a) The ratio range of frequency only b) The audio range of frequency only c) (a) and (b) both d) Video range of frequency only Ans: (c)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |