a) One b) Two c) Three d) Four Ans: (b)
a) When the speed of the d.c. motor is controlled by using thyratron, the plate voltage determines the armature current and the motor speed. b) When the speed of the d.c. motor is controlled by using thyratron, the grid voltage determines the armature current and the motor speed. c) When the speed of the d.c. motor is controlled by using thyratron, the type of gas used in the tube will determine the armature current and the motor speed. d) When the speed of the d.c. motor is controlled by using thyratron, the size of the thyratron will determine the armature current and the motor speed. Ans: (b)
a) Zero output impedance b) Low output impedance c) High output impedance d) Infinity impedance Ans: (b)
a) The problem of drift exists with the differentiating circuits b) The noise pulses are amplified and this can be significant in the output c) The problem of drift does not exist in the differentiating network d) The differentiating circuits are not economic Ans: (b)
a) True b) False Ans: (b)
a) The signal potentials are being added b) The signal current are being added c) Either (a) or (b) d) (a) and (b) simultaneously Ans: (b)
a) True b) False Ans: (b)
a) Zero-level offset b) Current leakage of the summing point c) Capacity leakage Ans: ()
a) 50,000 b) 50 × 106 c) 1000 d) 50 Ans: (b)
a) True b) False Ans: (a)
a) True b) False Ans: (a)
a) CRT b) Transistor c) Operational amplifier d) Rectifier e) Electronic tube Ans: (a)
a) Square waveform b) Sinusoidal waveform c) Triangular waveform d) Sawtooth waveform Ans: (d)
a) 1 × 10-6 seconds b) 1 × 10-8 seconds c) 8 × 10-6 seconds d) 1 × 10-12 seconds Ans: (a)
a) In series with the diode only b) In shunt with the diode only c) (a) or (b) d) None of the above Ans: (c)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |