a) Current transformer b) Voltage transformer c) Power transformer d) Distribution transformer Ans: (b)
a) Eliminate phase angle error b) Eliminate ratio error c) Obtain a transformation ratio more nearly equal to nominal ratio of the transformer d) None of the above Ans: (c)
a) 6 ohms b) 0.6 ohms c) 60 ohms d) 5 ohms Ans: (b)
a) 4 V b) 6 V c) 3 V d) 12 V e) 1 V f) 5 V Ans: (c)
a) Temperature b) Thermal e.m.f. c) Battery of circuit d) Resistance of the bridge Ans: (b)
a) Wein bridge b) Schering bridge c) Anderson bridge d) Maxwell bridge Ans: (c)
a) Hay bridge b) Anderson bridge c) Wein bridge d) Schering bridge Ans: (a)
a) Leads resistance b) Thermal e.m.f. c) Observation errors d) Temperature Ans: (b)
a) True b) False Ans: (b)
a) True b) False Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |