a) Maxwell-Wein bridge b) Wein bridge c) Anderson bridge d) Schering bridge Ans: (c)
a) Owen bridge b) Schering bridge c) Wein bridge d) Maxwell bridge Ans: (b)
a) 2 ma b) 2 amps c) 240 amps d) 60 amps e) 4 amps Ans: (e)
a) Power is the time rate doing work while the energy does not involve time b) Energy is the time rate of doing work while the power does not involve time c) Energy is V × I without taking time into account d) Power can be measured in watt-hours where energy cannot Ans: (a)
a) 2 coulombs b) 10 coulombs c) 5 amps d) 10 amps e) 5 coulombs Ans: (e)
a) 111.1 ohms b) 125 ohms c) 250 ohms d) 50 ohms Ans: (b)
a) Open the circuit at one point and use the meter to the circuit b) Open the circuit at the positive and the negative terminals of the voltage source c) Short the resistance to be checked and connect the meter across it d) Open the circuit at one end connect the meter to one end Ans: (a)
a) 500 ohms per volt b) 5000 ohms per volt c) 2000 ohms per volt d) 20,000 ohms per volt Ans: (d)
a) Open the circuit at one and use the meter to complete the circuit b) Open the circuit at two points and connect the meter across both points c) Let remain the circuit as it is and connect the mater across the resistance d) Allow the circuit to remain closed but disconnect the voltage source Ans: (c)
a) Will extend the range and reduces the meter resistance b) Will extend the range and increases the resistance c) Will decrease the range and meter resistance d) Will decrease the range but increases the inter resistance Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |