a) 1,000 b) 10,000 c) 100,000 d) 1 Ans: (d)
a) The voltage source will increase the resistance b) The current will decrease the resistance c) The ohmmeter has its own battery d) No current is needed for matter movement Ans: (c)
a) A high resistance in series with the meter movement b) A high resistance in parallel with the meter movement c) Less than one ohm in series with the meter movement d) Less than one ohm in parallel with the meter movement Ans: (b)
a) A high resistance range of R × 1 M Ω b) High input resistance of 11 MΩ or more c) Low current ranges of 59 micro-ampere or less d) Low input resistance equal to the lowest value on the R × 1 range Ans: (b)
a) Low value of current b) High value of current c) High value of voltage d) Low value of voltage e) Resistance value Ans: (e)
a) Conduct very large current b) Present an open circuit between the voltage source and the load c) Prevent short circuit between conducting wires d) Store very high currents Ans: (c)
a) High sensitivity b) High accuracy c) Maximum voltage drop across the meter d) Minimum effect on the current in the circuit Ans: (d)
a) High voltage range b) Minimum current through the meter c) Maximum loading effect d) More current supplied by the voltage source Ans: (d)
a) 1,26 gilberts b) 5,000 gauss c) 5,000 maxwells d) 16,000 kilolines Ans: (c)
a) 1,000 gauss b) 2,000 gauss c) 4,000 gauss d) 16,000gauss Ans: (a)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |