a) HV winding of large rating trans-former b) HV winding of small rating trans-former c) LV winding of small rating trans-former d) LV winding of large rating trans-former Ans: (d)
a) Lower voltage and higher current b) Higher voltage and lower current c) Lower voltage and lower current d) Higher voltage and higher current Ans: (a)
a) Thick paper b) Thin mica sheet c) Thin coating varnish d) None of these Ans: (c)
a) Is equal to the resistance of the HV winding b) Is greater than the resistance of the HV winding c) Is less than the resistance of the HV winding d) Maybe either more or less han the resistance of the HV winding Ans: (c)
a) The difference in the number of primary and secondary turns b) Changing currents in the two win-dings c) Magnetic flux linkage between the two windings d) All of these Ans: (c)
a) The supply frequency b) Load current c) Mutual flux d) None of these Ans: (b)
a) Lenz’s law b) Faraday’s law c) Coulomb’s law d) Ampere’s law Ans: (a)
a) Increases b) Decreases c) Remains unchanged d) First increases and becomes constant Ans: (c)
a) Increasing the number of lamina-tions of core b) Changing the turns ratio c) Using the magnetic core lower reluctance d) None of these Ans: (c)
a) Leakage flux b) Common core flux c) Size of the core d) Permeability of the core material Ans: (b)
 Multiple Choice Question (MCQ) of Electronics page-17:241. Which of the following statement is true? a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. |
Multiple Choice Question (MCQ) of Electronics page-16:226. Which of the following statement is correct? a) Inner electrons are always present in the semiconductor. b) Bound electrons are always present in the semiconductor. c) Free electrons are always present in the semiconductor. d) Inner and bound electrons are always present in the semiconductor. |
Multiple Choice Question (MCQ) of Electronics page-15:211. The materials whose electrical conductivity is usually less than 1 × 106 mho/m are a) Semiconductors b) Conductors c) Insulators d) Alloys |
Multiple Choice Question (MCQ) of Electronics page-14:196. In which of the following device the base resistors are not added in the package but added externally? a) UJT b) CUJT c) PUT d) None of the above |
Multiple Choice Question (MCQ) of Electronics page-13:181. The conduction in JEFT is always by the a) Majority carriers b) Minority carriers c) Holes d) Electrons e) Holes and electrons simultaneously |