a) The saturation voltage VCF of silicon transistor is more than germanium transistor. b) The saturation voltage VCE for germanium transistor is more than silicon transistor. c) The saturation voltage VCE for silicon transistor is same as that for germanium. d) The saturation voltage VCE for silicon transistor is lower than germanium transistor. Ans: (a)
a) Yes b) No Ans: (a)
a) In the saturation region of the transistor b) In the cut-off region of the transistor c) In the active region of the transistor d) In any of the above regions of the transistor Ans: (c)
a) Very small b) Very high c) Usually less than unity d) Always greater than one Ans: (d)
a) 60°C temperature b) 75°C temperature c) 175°C temperature d) 125°C temperature Ans: (b)
a) Thermal gradient b) Thermal instability c) Thermal runaway d) Thermal dissipation e) Thermal coefficient f) Thermal stability Ans: (c)
a) Frequency range b) Method of operation c) Ultimate use d) Type of load e) All the above points Ans: (e)
a) Class A b) Class B c) Class AB d) Class C Ans: (c)
a) True b) False Ans: (a)
a) Low-pass filter b) High-pass filter c) Current amplifier d) Power amplifier Ans: (a)
a) 2 Hz b) 1.6 Hz c) 1.6 kHz d) 1 Hz Ans: (b)
a) 30 dB per octave b) 6 dB per octave c) 100 dB per decade d) (a) or (c) e) 10 dB per decade Ans: (d)
a) Electrical noise b) Thermal noise c) Vibrational noise d) Frequency noise Ans: (b)
a) Blue noise b) White noise c) Red noise d) Black noise Ans: (b)
a) Shot noise b) White noise c) Flicker noise d) Excess noise Ans: (c)